Speaker
Description
The results of an investigation of silicon carbide (SiC) detectors when irradiated with neutrons are presented. SiC detectors were manufactured on the basis of the epitaxial layer of 4H-SiC n-type conductivity. The thickness of n-type epitaxial layer was 50 µm. Schottky barrier contacts with a diameter of 3.0 mm were made by vacuum evaporation of a double layer of Ni and Au 10 and 30 nm thick. The initial energy resolution of detectors was < 25 keV for α-particles.
The radiation resistance of SiC detectors was studied experimentally by analyzing their characteristics before and after fast neutron irradiation with integral fluxes of 5.1x10^13, 5.4x10^14, 3.4x10^15 n/cm2. The irradiation was carried out at the pulse reactor IBR-2M (JINR, Dubna). The α-source 226Ra (E = 4.8, 5.5, 6.0, 7.7 MeV) that was used for calibration and control of spectrometric characteristics of SiC detectors.
It is shown that after neutron irradiation, significant degradation was observed: the peaks from the alpha particles shifted towards smaller channels and became much wider; with an increase in the flux, the energy resolution degrades by two, ten and twenty times; the charge collection efficiency (CCE) decreased from 100% to 96%, 70% and 1% (operating voltage 350 V) at the neutron irradiation fluxes of 5.1x10^13, 5.4x10^14, 3.4x10^15 n/cm2, respectively.
| Section | 6. Applications of nuclear methods in science and technology |
|---|---|
| The speaker is a student or young scientist | No |
