Speaker
Description
The authors investigate the beta-electrons energy conversion into electrical energy inside 3C-SiC*/Si heterostructures doped with carbon-14 [1], which acts as an internal source of primary electrons spectrum and as the radioisotope nuclear energy accumulator. The question is raised in connection with the description of the endotaxy effectivness at the structural level, which means the growth of the doped single-crystal film inheriting the crystallographic orientation of the transformed Si-phase. The analysis of the technological aspects of the formation by endotaxy of high-temperature stable and radiation resistant β-SiC/Si heterostructure with respect to the concentration distribution of point defects of various nature, deep centers [2] and their probable association models with the participation of an impurity is the main way to increase the physical sensors reliability. The analysis of reversible association processes opens up ways to optimize the kinetics of diffusion mass transfer and microalloying during the phase transformation of silicon substrate into the silicon carbide film [3]. The dependences of the neutral defects concentrations on the factors of supersaturation of the gas phase by the conditional atomic concentration of carbon, on the concentration of impurities in the gas phase, as well as on their own defects of various nature, have the potential for the formation of deep levels in the forbidden zone and the potential for association [3]. The efficiency of the created structures depends on the combination of radionuclide activity and the formation of the contact area, which is confirmed by the beta spectrum research by the authors.
The dependence of the carrier generation efficiency on the activity or the introduced concentration of the radioisotope in the crystal lattice, taking into account the phase formation is evaluated. It is important to evaluate the possibility of structures metallization in order to collect nonequilibrium charge carriers taking into account changes in the work function. At this stage chips of structures with the size from 1x1 mm are used. At the same time, it is important to investigate the degree of influence of boundary effects. Research in the framework of this work also includes consideration of the band structures of the device, since there is an understanding of the alloying effect impurities with radionuclide on the position of energy levels in the band structure.
- A. V. Gurskaya, M. V. Dolgopolov, V. I. Chepurnov, Physics of Particles and Nuclei. 48, 941 (2017).
- A. V. Gurskaya etc. J. of Physics: Conf. Series. 1686, 012040 (2020).
- V. I. Chepurnov Vestnik Samarskogo Gosudarstvennogo Universiteta. Estestvenno-Nauchnaya Seriya. 7(118), 145 (2014)
| The speaker is a student or young scientist | No |
|---|---|
| Section | 6. Applications of nuclear methods in science and technology |
